BUP314D DATASHEET EBOOK

Approx. V reduced VCE(sat) and V reduced VF compared to BUPD. •. Short circuit withstand time – 10μs. •. Designed for: Frequency Converters. BUPD IGBT V 42A W/DIODE DUO-PK Infineon Technologies datasheet pdf data sheet FREE from Datasheet (data sheet) search for. BUPD datasheet, IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel.

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The product does not contain any of the restricted substances in concentrations and applications datashest by the Directive, and for components, the product is capable of being worked on at the bup314d datasheet temperatures required by lead—free soldering.

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BUPD datasheet and specification bup314d datasheet Download datasheet. Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm 0.

Some devices include an anti-parallel diode or bup314d datasheet integrated diode. Infineon Technologies components may be used in life-support devices or bup314d datasheet only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause datassheet failure of that life-support device or system or to affect the safety or effectiveness of that device or system.

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Page 4 Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance bup314d datasheet 5mm 0. BUPD datasheet and specification datasheet. Very soft, fast recovery hup314d EmCon HE diode. Page 2 Soldering temperature, 1.

Infineon BUP314D IGBT, 42 A 1200 V, 3-Pin TO-218

Page 3 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction — case Diode bup314d datasheet resistance, junction — case Thermal resistance, junction — ambient Electrical Characteristic unless otherwise specified j Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation Page 14 MIN 4.

Copy your embed bup314d datasheet and put on your site: Collector current as a function of switching frequency T 0. The Xatasheet combines the simple gate-drive characteristics of the MOSFETs with the high-current and low—saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

bup314d datasheet

NPT technology offers easy parallel switching capability due to. Definition of switching times Figure B. Page 15 Figure A.

BUPD Infineon Technologies, BUPD Datasheet

RS Components Statement of conformity. The product does not contain any of the restricted substances in concentrations and applications banned by the Directive, and for components, the product is bup314d datasheet of being worked on at the higher daatsheet required by lead—free soldering The restricted substances and maximum allowed concentrations bup314d datasheet the homogenous material are, by datashewt Elcodis is a trademark of Elcodis Company Ltd.

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Allowed number of bup314d datasheet circuits: All other trademarks are the property of their respective owners. They can be used in many applications that may require hard or soft switching including Industrial drives, UPS, Inverters, home appliances and Induction cooking.

Definition of diodes bup314d datasheet characteristics t j p t r Figure The product detailed below complies with the specifications published by RS Components. Download datasheet Kb Share this page.

Our website uses cookies and similar technologies to provide you bup314d datasheet a better service while searching or placing an order, for analytical purposes and to personalise our advertising to you. You can change your cookie settings by reading our cookie policy. Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction — case Diode thermal resistance, junction datashfet case Thermal resistance, junction daatasheet ambient Electrical Bup314d datasheet unless otherwise specified j Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation